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MC16XSD200FK 데이터시트(PDF) 9 Page - Freescale Semiconductor, Inc |
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MC16XSD200FK 데이터시트(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 60 page Analog Integrated Circuit Device Data Freescale Semiconductor 9 16XSD200 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25 – – – – – – 16 16 16 m ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150 – – – – – – 29 29 29 m ON-Resistance, Drain-to-Source difference from one channel to the other in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X RDS(ON)150 -0.9 – +0.9 m ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, VPWR = -24 V) RSD(ON)150 – – 29 m Max. detectable wiring length (2.5 mm²) for severe short-circuit detection (see Severe Short-circuit Fault (latchable fault)): High slew rate selected Medium slew rate selected: Low slew rate selected: LSHORT 50 100 200 130 260 500 300 600 1200 cm Overcurrent Detection thresholds with CSNS_ratio bit = 0 (CSR0) I_OCH1_0 I_OCH2_0 I_OCM1_0 I_OCM2_0 I_OCL1_0 I_OCL2_0 I_OCL3_0 27.5 17.5 10.8 6.7 4.5 3.0 1.5 33.0 21.0 13.0 8.0 5.4 3.6 1.8 38.5 24.5 15.2 9.3 6.3 4.2 2.1 A Overcurrent Detection thresholds with CSNS_ratio bit = 1(CSR1) I_OCH1_1 I_OCH2_1 I_OCM1_1 I_OCM2_1 I_OCL1_1 I_OCL2_1 I_OCL3_1 9.2 5.8 3.6 2.2 1.5 1.0 0.48 11.0 7.0 4.3 2.7 1.8 1.2 0.6 12.8 8.2 5.1 3.1 2.1 1.4 0.72 A Output (HS[x]) leakage Current in sleep state (positive value = outgoing) VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state) VHS,OFF = VPWR, device in sleep state (VPWR = 24 V) IOUT_LEAK – -40.0 – – +5.0 +5.0 µA Switch Turn-on threshold for Supply overvoltage (VPWR -GND) VD_GND(CLAMP) 58 – 66 V Switch turn-on threshold for Drain-Source overvoltage (measured at IOUT = 500 mA VDS(CLAMP) 58 – 66 V Switch turn-on threshold for Drain-Source overvoltage difference from one channel to the other in parallel mode (@ IHS = 500 mA) VDS(CLAMP) -2.0 – +2.0 V Table 3. Static Electrical Characteristics (continued) Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, -40 C TA 125 C, GND = 0 V. Typical values are average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise. Parameter Symbol Min Typ Max Unit |
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