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74AUP1G3208GW 데이터시트(PDF) 8 Page - NXP Semiconductors |
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74AUP1G3208GW 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 19 page 74AUP1G3208 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 — 22 June 2012 8 of 19 NXP Semiconductors 74AUP1G3208 Low-power 3-input OR-AND gate 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) CL = 5 pF tpd propagation delay A, B or C to Y; see Figure 9 [2] VCC = 0.8 V - 18.5 - - - - ns VCC = 1.1 V to 1.3 V 2.2 5.4 10.6 2.2 10.9 11.1 ns VCC = 1.4 V to 1.6 V 1.9 3.8 6.4 1.8 6.9 7.2 ns VCC = 1.65 V to 1.95 V 1.5 3.1 5.1 1.4 5.6 5.9 ns VCC = 2.3 V to 2.7 V 1.3 2.4 3.7 1.2 4.1 4.4 ns VCC = 3.0 V to 3.6 V 1.2 2.2 3.2 1.1 3.4 3.6 ns CL = 10 pF tpd propagation delay A, B or C to Y; see Figure 9 [2] VCC = 0.8 V - 22.1 - ns VCC = 1.1 V to 1.3 V 2.6 6.3 12.4 2.5 12.8 13.1 ns VCC = 1.4 V to 1.6 V 2.3 4.4 7.4 2.1 8.0 8.4 ns VCC = 1.65 V to 1.95 V 2.0 3.6 5.9 1.8 6.4 6.8 ns VCC = 2.3 V to 2.7 V 1.7 3.0 4.4 1.6 4.8 5.1 ns VCC = 3.0 V to 3.6 V 1.6 2.7 3.9 1.4 4.2 4.4 ns CL = 15 pF tpd propagation delay A, B or C to Y; see Figure 9 [2] VCC = 0.8 V - 25.6 - - - - ns VCC = 1.1 V to 1.3 V 3.0 7.1 14.1 2.8 14.6 14.9 ns VCC = 1.4 V to 1.6 V 2.6 5.0 8.4 2.4 9.1 9.5 ns VCC = 1.65 V to 1.95 V 2.2 4.1 6.7 2.1 7.4 7.8 ns VCC = 2.3 V to 2.7 V 2.0 3.4 5.0 1.9 5.5 5.9 ns VCC = 3.0 V to 3.6 V 1.9 3.2 4.5 1.7 4.8 5.0 ns CL = 30 pF tpd propagation delay A, B or C to Y; see Figure 9 [2] VCC = 0.8 V - 34.1 - - - - ns VCC = 1.1 V to 1.3 V 3.9 9.3 18.9 3.7 19.7 20.1 ns VCC = 1.4 V to 1.6 V 3.4 6.5 11.0 3.2 12.1 12.7 ns VCC = 1.65 V to 1.95 V 3.0 5.4 8.9 2.9 9.7 10.3 ns VCC = 2.3 V to 2.7 V 2.8 4.5 6.5 2.6 7.1 7.5 ns VCC = 3.0 V to 3.6 V 2.6 4.3 5.8 2.4 6.4 6.7 ns |
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