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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI6966 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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SI6966 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  SI6966DQ Rev. A (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 14 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 0.8 1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –3.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.2 A VGS = 4.5 V, ID = 5.5A, TJ=125 °C 17 24 23 21 35 34 m Ω ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 5 V, ID = 5.5 A 26 S Dynamic Characteristics Ciss Input Capacitance 1082 pF Coss Output Capacitance 277 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 130 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 20 ns tr Turn–On Rise Time 8 27 ns td(off) Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 8 16 ns Qg Total Gate Charge 12 17 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 5.5 A, VGS = 4.5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 0.83 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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