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SSR4N60B 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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SSR4N60B 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Rev. B, November 2001 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD # 4.0A, di/dt # 300A/µs, VDD # BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width # 300 µs, Duty cycle # 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.65 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.4 A -- 2.0 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 1.4 A -- 3.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 710 920 pF Coss Output Capacitance -- 65 85 pF Crss Reverse Transfer Capacitance -- 14 19 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 4.0 A, RG = 25 Ω -- 20 50 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 70 150 ns tf Turn-Off Fall Time -- 55 120 ns Qg Total Gate Charge VDS = 480 V, ID = 4.0 A, VGS = 10 V -- 22 29 nC Qgs Gate-Source Charge -- 4.8 -- nC Qgd Gate-Drain Charge -- 8.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 4.0 A, dIF / dt = 100 A/µs -- 330 -- ns Qrr Reverse Recovery Charge -- 2.67 -- µC |
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