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2SC3665 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SC3665
상세설명  Audio Power Amplifier Applications Driver-Stage Amplifier Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3665 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  2SC3665 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3665 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3665 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3665 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC3665
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
V
DC current gain
hFE
(Note 2)
VCE = 5 V, IC = 100 mA
80
240
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
C3665
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)


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