2SK1875

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK1875

High Frequency Amplifier Applications

AM High Frequency Amplifier Applications

Audio Frequency Amplifier Applications

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

−20

V

Gate current

10

mA

Drain power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

⎯

⎯

−1.0

nA

Gate-drain breakdown voltage

−20

⎯

⎯

V

Drain current

(Note)

6

⎯

32

mA

Gate-source cut-off voltage

⎯

⎯

−2.5

V

Forward transfer admittance

15

25

⎯

mS

Input capacitance

⎯

7.5

10

pF

Reverse transfer capacitance

⎯

2

3

pF

GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA

(G)

(L)

(V)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2E1B

Weight: 0.006 g (typ.)