전자부품 데이터시트 검색엔진 |
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SI8429DB-T1-E1 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI8429DB-T1-E1 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 11 page Vishay Siliconix Si8429DB Document Number: 74399 S13-1847-Rev.D, 19-Aug-13 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.4 1 10 20 0.0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.02 0.03 0.04 0.05 0.06 0.07 0.08 012345 ID = 1 A VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0.001 0 40 80 60 10 Time (s) 20 0.01 0.1 1 100 600 Safe Operating Area, Junction-to-Ambient 100 1 0 1 1 1 . 0 0.01 10 0.1 TA = 25 °C Single Pulse VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified P(t) = 10 DC IDM Limited ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 Limited by RDS(on)* |
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유사한 설명 - SI8429DB-T1-E1 |
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