전자부품 데이터시트 검색엔진 |
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2SC2882-Y 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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2SC2882-Y 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC2882 2009-12-21 3 Ambient temperature Ta (°C) PC – Ta 0 0 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area 10 6 4 2 0 0 100 200 300 400 2 IB = 0.5 mA Common emitter Ta = 25°C 3 5 1 0 8 1.0 0 0.2 0.4 0.6 0.8 1.2 Common emitter VCE = 2 V Ta = 100°C 500 400 300 200 100 0 −25 25 1000 300 100 50 30 10 500 3 10 30 100 300 1 Common emitter VCE = 2 V Ta = 100°C 25 −25 100 10 1 0.03 30 300 0.05 0.1 0.3 0.5 1 3 Ta = 100°C −25 Common emitter IC/IB = 10 25 500 1 10 50 2000 1000 300 100 30 3 5 0.5 3 1 10 100 30 300 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 10 ms* |
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