전자부품 데이터시트 검색엔진 |
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2SK1062 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SK1062 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SK1062 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = 60 V, VGS = 0 ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 60 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2 ⎯ 3.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 50 mA, VGS = 10 V ⎯ 0.6 1.0 Ω Drain-source ON voltage VDS (ON) ID = 50 mA, VGS = 10 V ⎯ 30 50 mV Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 55 65 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 13 18 pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 40 50 pF Rise time tr ⎯ 8 ⎯ Turn-on time ton ⎯ 14 ⎯ Fall time tf ⎯ 35 ⎯ Switching time Turn-off Time toff VIN: tr, tf < 5 ns D.U <= 1% (Zout = 50 Ω) ⎯ 75 ns Note: This transistor is the electrostatic sensitive device. Please handle with caution. |
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