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GT30J341 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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GT30J341 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 10 page GT30J341 3 6.2. 6.2. 6.2. 6.2. Dynamic Characteristics (T Dynamic Characteristics (T Dynamic Characteristics (T Dynamic Characteristics (Taaaa = 25 = 25 = 25 = 25 , unless otherwise specified) , unless otherwise specified) , unless otherwise specified) , unless otherwise specified) Characteristics Input capacitance Switching time (turn-on delay time) Switching time (rise time) Switching time (turn-on time) Switching time (turn-off delay time) Switching time (fall time) Switching time (turn-off time) Switching loss (turn-on switching loss) Switching loss (turn-off switching loss) Switching time (turn-on delay time) Switching time (rise time) Switching time (turn-on time) Switching time (turn-off delay time) Switching time (fall time) Switching time (turn-off time) Switching loss (turn-on switching loss) Switching loss (turn-off switching loss) Reverse recovery time Symbol Cies td(on) tr ton td(off) tf toff Eon Eoff td(on) tr ton td(off) tf toff Eon Eoff trr Test Condition VCE = 10 V, VGE = 0 V, f = 100 kHz Inductive load VCC = 300 V, IC = 30 A, VGG = +15 V/0 V, RG = 24 Ω Tc = 25, See Fig. 6.2.1, 6.2.2, 6.2.3 Inductive load VCC = 300 V, IC = 30 A, VGG = +15 V/0 V, RG = 24 Ω Tc = 150, See Fig. 6.2.1, 6.2.2, 6.2.3 IF = 30 A, di/dt = -100 A/µs Min Typ. 2900 0.08 0.06 0.2 0.28 0.04 0.38 0.8 0.6 0.08 0.08 0.25 0.3 0.06 0.4 1.2 0.8 50 Max Unit pF µs mJ µs mJ ns Fig. Fig. Fig. Fig. 6.2.1 6.2.1 6.2.1 6.2.1 Test Circuit of Switching Time Test Circuit of Switching Time Test Circuit of Switching Time Test Circuit of Switching Time Fig. Fig. Fig. Fig. 6.2.2 6.2.2 6.2.2 6.2.2 Timing Chart of Switching Time Timing Chart of Switching Time Timing Chart of Switching Time Timing Chart of Switching Time Fig. Fig. Fig. Fig. 6.2.3 6.2.3 6.2.3 6.2.3 Timing Chart of Switching Loss Timing Chart of Switching Loss Timing Chart of Switching Loss Timing Chart of Switching Loss 2012-03-29 Rev.1.0 |
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