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AD1674KR 데이터시트(PDF) 6 Page - Analog Devices |
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AD1674KR 데이터시트(HTML) 6 Page - Analog Devices |
6 / 12 page AD1674 REV. C –6– ORDERING GUIDE INL S/(N+D) Package Package Model1 Temperature Range (TMIN to TMAX)(TMIN to TMAX) Description Option2 AD1674JN 0 °C to +70°C ±1 LSB 69 dB Plastic DIP N-28 AD1674KN 0 °C to +70°C ±1/2 LSB 70 dB Plastic DIP N-28 AD1674JR 0 °C to +70°C ±1 LSB 69 dB Plastic SOIC R-28 AD1674KR 0 °C to +70°C ±1/2 LSB 70 dB Plastic SOIC R-28 AD1674AR –40 °C to +85°C ±1 LSB 69 dB Plastic SOIC R-28 AD1674BR –40 °C to +85°C ±1/2 LSB 70 dB Plastic SOIC R-28 AD1674AD –40 °C to +85°C ±1 LSB 69 dB Ceramic DIP D-28 AD1674BD –40 °C to +85°C ±1/2 LSB 70 dB Ceramic DIP D-28 AD1674TD –55 °C to +125°C ±1 LSB 70 dB Ceramic DIP D-28 NOTES 1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current AD1674/883B data sheet. SMD is also available. 2N = Plastic DIP; D = Hermetic Ceramic DIP; R = Plastic SOIC. TIMING—STAND-ALONE MODE (Figures 4a and 4b) J, K, A, B Grades T Grade Parameter Symbol Min Typ Max Min Typ Max Units Data Access Time tDDR 150 150 ns Low R/C Pulse Width tHRL 50 50 ns STS Delay from R/C tDS 200 225 ns Data Valid After R/C Low tHDR 25 25 ns STS Delay After Data Valid tHS 0.6 0.8 1.2 0.6 0.8 1.2 µs High R/C Pulse Width tHRH 150 150 ns NOTE All min and max specifications are guaranteed. Specifications subject to change without notice. WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD1674 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. DATA VALID DATA VALID HIGH-Z STS DB11 – DB0 R/C _ t HRL t DS t C t HS t HDR Figure 4a. Stand-Alone Mode Timing Low Pulse for R/C DATA VALID HIGH-Z HIGH-Z STS DB11 – DB0 R/C _ t HRH t DS t C t DDR t HDR t HL Figure 4b. Stand-Alone Mode Timing High Pulse for R/C ABSOLUTE MAXIMUM RATINGS* VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to + 16.5 V VEE to Digital Common . . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V VLOGIC to Digital Common . . . . . . . . . . . . . . . . . . 0 V to +7 V Analog Common to Digital Common . . . . . . . . . . . . . . . ±1 V Digital Inputs to Digital Common . . . –0.5 V to VLOGIC +0.5 V Analog Inputs to Analog Common . . . . . . . . . . . . VEE to VCC 20 VIN to Analog Common . . . . . . . . . . . . . . . . . VEE to +24 V REF OUT . . . . . . . . . . . . . . . . . Indefinite Short to Common . . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to VCC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175 °C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW Lead Temperature, Soldering (10 sec) . . . . . . . +300 °C, 10 sec Storage Temperature . . . . . . . . . . . . . . . . . . . –65 °C to +150°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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