전자부품 데이터시트 검색엔진 |
|
TPS1100DRG4 데이터시트(PDF) 2 Page - Texas Instruments |
|
TPS1100DRG4 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 14 page TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages. TPS1100Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1100. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10% ALL DIMENSIONS ARE IN MILS 57 64 TPS1100Y (2) (6) (1) (3) (7) (8) (5) (4) DRAIN SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN (2) (1) (3) (4) (6) (7) (8) (5) |
유사한 부품 번호 - TPS1100DRG4 |
|
유사한 설명 - TPS1100DRG4 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |