2N4918G datasheet(2/6 Pages) ONSEMI

부품명	2N4918G

상세설명	Medium-Power Plastic PNP Silicon Transistors

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2N4918 − 2N4920* Series

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 0.1 Adc, IB = 0)

2N4918

2N4919

2N4920

VCEO(sus)

40

60

80

−

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N4918

(VCE = 30 Vdc, IB = 0)

2N4919

(VCE = 40 Vdc, IB = 0)

2N4920

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C

ICEX

−

0.1

0.5

mAdc

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

40

30

10

−

150

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

−

0.6

Vdc

Base−Emitter Saturation Voltage (Note 4)

(IC = 1.0 Adc, IB = 0.1 Adc)

VBE(sat)

−

1.3

Vdc

Base−Emitter On Voltage (Note 4)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

−

1.3

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT

3.0

−

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

−

100

pF

Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

25

−

4. Pulse Test: PW

[ 300 ms, Duty Cycle [ 2.0%

ORDERING INFORMATION

Device

Package

Shipping†

2N4918

TO−225

500 Unit / Bulk

2N4919

TO−225

500 Unit / Bulk

2N4920

TO−225

500 Unit / Bulk

2N4920G

TO−225

(Pb−Free)

500 Unit / Bulk

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

유사한 부품 번호 - 2N4918G

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