MTP3N120E

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

1.0

0.1

0.01

1.0E–05

1.0E–04

1.0E–03

1.0E–02

t, TIME (s)

120

100

40

0

25

50

75

100

125

150

100

10

1.0

0.1

0.1

1.0

10

100

1,000

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 13. Thermal Response

ID = 3 A

80

60

20

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

1.0E–01

1.0E+00

1.0E+01

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

0.02

10,000

0.01

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 20 V

SINGLE PULSE

TC = 25°C

100

µs

1 ms

10

µs

dc

10 ms