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IRF5850TR 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF5850TR
상세설명  Ultra Low On-Resistance
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF5850TR 데이터시트(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-2.2
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-1.8
A
IDM
Pulsed Drain Current

-9.0
PD @TA = 25°C
Power Dissipation
0.96
PD @TA = 70°C
Power Dissipation
0.62
Linear Derating Factor
7.7
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
1/13/03
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
130
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRF5850
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum
functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and RDS(on) reduction enables an increase in
current-handling capability.
VDSS = -20V
RDS(on) = 0.135Ω
Description
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93947A
TSOP-6
Top View


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