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1 / 21 page This is information on a product in full production. May 2013 DocID024645 Rev 1 1/21 21 STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet − production data Figure 1. Internal schematic diagram Features • The worldwide best R DS(on) * area among fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. TO-220FP 1 2 3 TAB 1 2 3 DPAK TO-220 1 3 TAB Order codes VDS @ TJmax RDS(on) max ID STD13NM60ND 650 V 0.38 Ω 11 A STF13NM60ND STP13NM60ND Table 1. Device summary Order codes Marking Package Packaging STD13NM60ND 13NM60ND DPAK Tape and reel STF13NM60ND TO-220FP Tube STP13NM60ND TO-220 www.st.com |
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