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STF13NM60ND 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STF13NM60ND
상세설명  N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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This is information on a product in full production.
May 2013
DocID024645 Rev 1
1/21
21
STD13NM60ND, STF13NM60ND,
STP13NM60ND
N-channel 600 V, 0.32
Ω typ., 11 A, FDmesh™ II Power MOSFET
(with fast diode) in DPAK, TO-220FP and TO-220 packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
• The worldwide best R
DS(on)
* area among fast
recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
TO-220FP
1
2
3
TAB
1
2
3
DPAK
TO-220
1
3
TAB
Order codes
VDS @ TJmax RDS(on) max
ID
STD13NM60ND
650 V
0.38
Ω
11 A
STF13NM60ND
STP13NM60ND
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD13NM60ND
13NM60ND
DPAK
Tape and reel
STF13NM60ND
TO-220FP
Tube
STP13NM60ND
TO-220
www.st.com


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