FDD86113LZ datasheet(1/6 Pages) FAIRCHILD

부품명	FDD86113LZ

상세설명	N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓

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제조업체	FAIRCHILD [Fairchild Semiconductor]

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June 2013

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www.fairchildsemi.com

FDD86113LZ Rev. C1

FDD86113LZ

N-Channel Shielded Gate PowerTrench® MOSFET

100 V, 5.5 A, 104 m

Ω

Features

Shielded Gate MOSFET Technology

Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A

Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A

HBM ESD protection level > 6 kV typical (Note 4)

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used

surface mount package

100% UIL Tested

RoHS Compliant

General Description

This N-Channel logic Level MOSFETs are produced using

Fairchild Semiconductor‘s advanced PowerTrench® process

that incorporates Shielded Gate technology. This process has

been optimized for the on-state resistance and yet maintain

superior switching performance. G-S zener has been added to

enhance ESD voltage level.

Application

DC-DC conversion

S

G

D

G

S

D

TO -2 52

D-P A K

(T O -25 2)

MOSFET Maximum Ratings T

C = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

100

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current

-Continuous

TC = 25 °C

5.5

A

-Continuous

TA = 25 °C

(Note 1a)

4.2

-Pulsed

15

EAS

Single Pulse Avalanche Energy

(Note 3)

12

mJ

PD

Power Dissipation

TC = 25 °C

29

W

Power Dissipation

TA = 25 °C

(Note 1a)

3.1

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

(Note 1)

4.3

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

96

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD86113LZ

D-PAK(TO-252)

13 ’’

12 mm

2500 units

유사한 부품 번호 - FDD86113LZ

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	FDD86113LZ	354Kb / 2P	isc N-Channel MOSFET Transistor
Guangdong Youtai Semico...	FDD86113LZ	454Kb / 6P	100V N-Channel MOSFET

More results

유사한 설명 - FDD86113LZ

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	FDP4D5N10C	1,023Kb / 8P	N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 128 A, 4.5 m廓 June, 2017, Rev. 1.0
ON Semiconductor	FDP8D5N10C	1,022Kb / 8P	N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 76 A, 8.5 m廓 May, 2017, Rev. 1.0
Fairchild Semiconductor	FDD86250	315Kb / 6P	FDD86250 N-Channel Shielded Gate PowerTrench짰 MOSFET 150 V, 50 A, 22 m廓
	FDT1600N10ALZ	291Kb / 9P	N-Channel PowerTrench짰 MOSFET 100 V, 5.6 A, 160 m廓
	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
	FDD86110	257Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 50 A, 10.2 m廓
ON Semiconductor	FDP085N10A	3Mb / 10P	N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓 November-2017, Rev. 3
Fairchild Semiconductor	FDS86140	255Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 11.2 A, 9.8 m廓
Diodes Incorporated	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
Fairchild Semiconductor	FDMS86150	324Kb / 7P	N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 4.85 m廓

More results

FDD86113LZ 데이터시트(PDF) 1 Page - Fairchild Semiconductor

FDD86113LZ 데이터시트(HTML) 1 Page - Fairchild Semiconductor

유사한 부품 번호 - FDD86113LZ

유사한 설명 - FDD86113LZ

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