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AM28F020-120EI 데이터시트(PDF) 1 Page - Advanced Micro Devices |
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AM28F020-120EI 데이터시트(HTML) 1 Page - Advanced Micro Devices |
1 / 35 page FINAL Publication# 14727 Rev: F Amendment/+2 Issue Date: January 1998 Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to VCC +1 V s Flasherase Electrical Bulk Chip Erase — One second typical chip erase time s Flashrite Programming — 10 µs typical byte program time — 4 s typical chip program time s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Automatic write/erase pulse stop timer GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory orga- nized as 256 Kbytes of 8 bits each. AMD’s Flash mem- ories offer the most cost-effective and reliable read/ write no n-volat ile ran dom access memor y. Th e Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. Th e Am 28F 020 i s eras ed w hen s h ip ped from the factory. The standard Am28F020 offers access times of as fast as 70 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus conten- tion, the device has separate chip enable (CE#) and output enable (OE#) controls. AMD’s Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The Am28F020 uses a command register to manage this functionality, while maintaining a JEDEC-standard 32- pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. AMD’s Flash technology reliably stores memory con- tents even after 10,000 erase and program cycles. The AMD cell is designed to optimize the erase and pro- gramming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The Am28F020 uses a 12.0 ±5% V PP supply input to perform the Flasherase and Flashrite functions. The highest degree of latch-up protection is achieved with AMD’s proprietary non-epi process. Latch-up pro- tection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V. The Am28F020 is byte programmable using 10 µs pro gramming pu lse s in acco rdance with AMD’s Flashrite programming algorithm. The typical room temperature programming time of the Am28F020 is four seconds. The entire chip is bulk erased using 10 ms erase pulses according to AMD’s Flasherase algorithm. Typical erasure at room temperature is accomplished in less than one second. The windowed package and the 15–20 minutes required for EPROM erasure using ultraviolet light are eliminated. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine, which controls the erase and programming circuitry. During write cycles, the command register internally latches |
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