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AM28F256-120FE 데이터시트(PDF) 2 Page - Advanced Micro Devices |
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AM28F256-120FE 데이터시트(HTML) 2 Page - Advanced Micro Devices |
2 / 35 page 2 Am28F256 Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as inputs to an internal state-machine which controls the erase and programming circuitry. During write cycles, the command register internally latches ad- dress and data needed for the programming and erase operations. For system design simplification, the Am28F256 is designed to support either WE# or CE# controlled writes. During a system write cycle, ad- dresses are latched on the falling edge of WE# or CE# whichever occurs last. Data is latched on the rising edge of WE# or CE# whichever occurs first. To simplify the fol- lowing discussion, the WE# pin is used as the write cycle control pin throughout the rest of this text. All setup and hold times are with respect to the WE# signal. AMD’s Flash technology combines years of EPROM and EEPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The Am28F256 electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. BLOCK DIAGRAM PRODUCT SELECTOR GUIDE Family Part Number Am28F256 Speed Options (VCC = 5.0 V ± 10%) -70 -90 -120 -150 -200 Max Access Time (ns) 70 90 120 150 200 CE# (E#) Access (ns) 70 90 120 150 200 OE# (G#) Access (ns) 35 35 50 55 55 Erase Voltage Switch Command Register Program Voltage Switch Chip Enable Output Enable Logic Y-Decoder X-Decoder Y-Gating 262,144 Bit Cell Matrix 11560F-1 A0–A14 OE# CE# WE# VSS VCC To Array DQ0–DQ7 Input/Output Buffers Data Latch VPP Address Latch Low VCC Detector Program/Erase Pulse Timer State Control |
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