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AM27C64-55JE 데이터시트(PDF) 6 Page - Advanced Micro Devices

부품명 AM27C64-55JE
상세설명  64 Kilobit (8 K x 8-Bit) CMOS EPROM
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Am27C64
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–12 = VIL.
4. See DC Programming Characteristics for VPP voltage during programming.
Mode
CE#
OE#
PGM#
A0
A9
VPP
Outputs
Read
VIL
VIL
XXX
X
DOUT
Output Disable
X
VIH
X
X
X
X
High Z
Standby (TTL)
VIH
X
X
X
X
X
High Z
Standby (CMOS)
VCC ± 0.3 V
X
X
X
X
X
High Z
Program
VIL
XVIL
XX
VPP
DIN
Program Verify
VIL
VIL
VIH
XX
VPP
DOUT
Program Inhibit
VIH
X
XXX
VPP
High Z
Autoselect
(Note 3)
Manufacturer Code
VIL
VIL
XVIL
VH
X01h
Device Code
VIL
VIL
XVIH
VH
X15h


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