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AM29LV081-100EEB 데이터시트(PDF) 1 Page - Advanced Micro Devices

부품명 AM29LV081-100EEB
상세설명  8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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PRELIMINARY
Publication# 20977
Rev: C Amendment/+1
Issue Date: March 1998
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV081
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Optimized architecture for Miniature Card and
mass storage applications
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
s Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
s Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector (using
programming equipment) to prevent any
program or erase operations within that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
s Package option
— 40-pin TSOP
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data


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