BD433 datasheet(1/1 Pages) WINNERJOIN

부품명	BD433

상세설명	TRANSISTOR (NPN)

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WEJ

ELECTRONIC

CO.,LTD

BD433/435/437 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.25

W (Tamb=25

℃)

Collector current

ICM:

4

A

Collector-base voltage

V(BR)CBO:

BD433

22 V

BD435

32 V

BD437

45 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

BD433

Ic=

100µA, IE=0

BD435

BD437

22

32

45

V

Collector-emitter breakdown voltage

V(BR)CEO

BD433

Ic=

100mA, IB=0

BD435

BD437

22

32

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=22V, IE=0

BD433

VCB=32V, IE=0

BD435

VCB=45V, IE=0

BD437

1

µA

Collector cut-off current

ICEO

VCE=22V, IE=0

BD433

VCE=32V, IE=0

BD435

VCE=45V, IE=0

BD437

10

µA

Emitter cut-off current

IEBO

VEB=5V, IE=0

1

µA

hFE(1)

VCE=1V, IC=500mA

85

hFE(2)

VCE=5V, IC=10mA

BD433/BD435

BD437

40

30

DC current gain

hFE(3)

VCE=1V, IC=2A

BD433/BD435

BD437

50

40

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=0.2A

BD433/BD435

BD437

0.5

0.6

V

Base-emitter voltage

VBE

VCE=1V, IC=2A

BD433/BD435

BD437

1.1

1.2

V

Transition frequency

fT

VCE=1V, IC=250mA

3

MHz

1 2 3

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

BD433/435/437

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E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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