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CD00257532 데이터시트(PDF) 11 Page - STMicroelectronics |
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CD00257532 데이터시트(HTML) 11 Page - STMicroelectronics |
11 / 19 page L4949ED-E, L4949EP-E Application information Doc ID 16823 Rev 1 11/19 present functions are required. The modular approach of this device allows to get easily also other features and functions when required. 3.3 Voltage regulator The voltage regulator uses an Isolated Collector Vertical PNP transistor as a regulating element. Figure 4. Foldback characteristic of VO With this structure very low dropout voltage at currents up to 100mA is obtained. The dropout operation of the standby regulator is maintained down to 3V input supply voltage. The output voltage is regulated up to the transient input supply voltage of 40V. With this feature no functional interruption due to overvoltage pulses is generated. The typical curve showing the standby output voltage as a function of the input supply voltage is shown in Figure 5. The current consumption of the device (quiescent current) is less than 300 µA. To reduce the quiescent current peak in the undervoltage region and to improve the transient response in this region, the dropout voltage is controlled, the quiescent current as a function of the supply input voltage is shown in Figure 6. |
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