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STD60NF06T4 데이터시트(PDF) 4 Page - STMicroelectronics |
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STD60NF06T4 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STD60NF06 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 175°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A 0.014 0.016 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward transconductance VDS = 15V, ID = 30A 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 1810 360 125 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 30A RG =4.7Ω VGS = 10V (see Figure 12) 16 108 43 20 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 48V, ID = 60A, VGS = 10V (see Figure 13) 49 18 14 66 nC nC nC |
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