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74LVC2G00DC 데이터시트(PDF) 7 Page - NXP Semiconductors

부품명 74LVC2G00DC
상세설명  Dual 2-input NAND gate
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제조업체  NXP [NXP Semiconductors]
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74LVC2G00DC 데이터시트(HTML) 7 Page - NXP Semiconductors

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74LVC2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 8 April 2013
7 of 20
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
11. Dynamic characteristics
[1]
Typical values are measured at nominal VCC and at Tamb = 25 C.
[2]
tpd is the same as tPLH and tPHL
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L  VCC
2
 f
o) = sum of outputs.
12. Waveforms
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground 0 V); for test circuit see Figure 9.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
nA, nB to nY; see Figure 8
[2]
VCC = 1.65 V to 1.95 V
1.2
3.5
8.6
1.2
10.8
ns
VCC = 2.3 V to 2.7 V
0.7
2.3
4.8
0.7
6.0
ns
VCC = 2.7 V
0.7
3.0
5.6
0.7
7.0
ns
VCC = 3.0 V to 3.6 V
0.7
2.2
4.3
0.7
5.4
ns
VCC = 4.5 V to 5.5 V
0.5
1.8
3.3
0.5
4.2
ns
CPD
power dissipation
capacitance
per gate; VI = GND to VCC
[3]
-14
-
-
-
pF
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8.
Input (nA, nB) to output (nY) propagation delays
001aae972
nA, nB input
nY output
tPLH
tPHL
GND
VI
VM
VM
VOH
VOL


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