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TSC5804DCHC5G 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC5804DCHC5G 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 5 page TSC5804D High Voltage Fast-Switching NPN Power Transistor 2/5 Version: A13 Electrical Specifications (TA = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =0.5mA BVCBO 1050 -- -- V Collector-Emitter Breakdown Voltage IC =5mA BVCEO 450 -- -- V Emitter-Base Breakdown Voltage IE =1mA BVEBO 15 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- 10 250 uA Collector Cutoff Current VCB =950V, IE =0 ICBO -- -- 10 uA Collector-Emitter Saturation Voltage IC=1A, IB =0.2A VCE(SAT)1 --- -- 0.5 V Collector-Emitter Saturation Voltage IC=3.5A, IB =1A VCE(SAT)2 --- 1.5 2.0 V Base-Emitter Saturation Voltage IC=3.5A, IB =1A VBE(SAT)1 -- 1.1 1.5 V DC Current Gain VCE =5V, IC =100mA hFE1 50 70 100 VCE =3V, IC =800mA hFE2 25 30 50 Diode Forward Voltage IC=2A VF -- -- 1.5 V Resistive Load Switching Time (Ratings) Rise Time VCC =5V, IC =0.5A, tr -- -- 1 uS Storage Time tSTG 4.5 5 5.5 uS Fall Time tf -- -- 1.2 uS Notes: Pulsed duration =380uS, duty cycle ≤2% |
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