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SI7450DP 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI7450DP 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Vishay Siliconix Si7450DP Document Number: 71432 S13-0300-Rev. F, 11-Feb-13 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.05 0.10 0.15 0.20 0 8 16 24 32 40 VGS = 6 V VGS = 10 V ID - Drain Current (A) 0 4 8 12 16 20 0 1530 4560 VDS = 100 V ID = 4.0 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 50 10 1 VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 4.0 A TJ - Junction Temperature (°C) 0.00 0.05 0.10 0.15 0.20 0.25 02468 10 ID = 4.0 A VGS - Gate-to-Source Voltage (V) |
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