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OP215GS 데이터시트(PDF) 3 Page - Analog Devices

부품명 OP215GS
상세설명  Dual Precision JFET-Input Operational Amplifier
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REV. A
–3–
OP215
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
OP215E
OP215G
Parameter
Symbol
Conditions
Min
Type
Max
Min
Type
Max
Unit
Input Offset Voltage
VOS
RS = 50
W
0.4
1.65
3.5
8.0
mV
Average Input Offset
Voltage Drift
Without External Trim
1
TCVOS
315
6
V/
∞C
With External Trim
TCVOSn
RP = 100 k
W
34
V/
∞C
Input Offset Current
2
IOS
Tj = 70
∞C
0.06
0.45
0.08
0.65
nA
TA = 70
∞C
0.08
0.80
0.10
1.2
nA
Device Operating
Input Bias Current2
IS
Tj = 70
∞C
±0.12 ±0.70
±0.14 ±0.9
nA
TA = 70
∞C
±0.16 ±1.40
±0.19 ±1.8
nA
Device Operating
Input Voltage Range
IVR
10.2
14.7
10.1
14.7
V
–10.2
–11.4
–10.1
–11.3
V
Common-Mode
CMRR
VCM =
±IVR
80
98
7694
dB
Rejection Ratio
Power Supply Rejection
PSRR
VS =
±10 V to ±16 V
13
100
Ratio
VS =
±10 V to ±15 V
20
159
V/V
Large-Signal
AVO
RL
2 k
W
50
180
35
130
V/mV
Voltage Gain
VO =
±10 V
Output Voltage Swing
VO
RL
10 k
W±12
±13
±12
±13
V
NOTES
1Sample tested.
2Input bias current is specified for two different conditions. The T
j = 25
∞C specification is with the junction at ambient temperature; the Device Operating specification is
with the device operating in a warmed up condition at 25
∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of IS versus Tj and IS versus TA. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
JFET input op amps. IS and IOS are measured at VCM = 0.
Specifications are subject to change without notice.
(at VS =
±15 V, 0 C TA 70 C for E Grade, –40 C TA +85 C for G Grade, unless
otherwise noted.)


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