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SMK0160D 데이터시트(PDF) 1 Page - KODENSHI_AUK CORP. |
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SMK0160D 데이터시트(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 8 page KSD-T6O009-001 1 SMK0160D Advanced N-Ch Power MOSFET G D PIN Connection S D S TO-252 G SWITCHING REGULATOR APPLICATIONS Features • High Voltage : BVDSS=600V(Min.) • Low Crss : Crss=3.4pF(Typ.) • Low gate charge : Qg=3.9nC(Typ.) • Low RDS(on) : RDS(on)=11.5Ω(Max.) Ordering Information Marking Diagram Absolute maximum ratings (T C=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃) 1.0 A Drain current (DC) * ID (Tc=100℃) 0.77 A Drain current (Pulsed) * IDM 4.0 A Power dissipation PD 28 W Avalanche current (Single) ② IAS 1.0 A Single pulsed avalanche energy ② EAS 22 mJ Avalanche current (Repetitive) ① IAR 1.0 A Repetitive avalanche energy ① EAR 2.5 mJ Junction temperature TJ 150 Storage temperature range Tstg -55~150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Junction-case Rth(J-C) - 4.46 Thermal resistance Junction-ambient Rth(J-A) - 62.5 °C/W Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Type No. Marking Package Code SMK0160D SMK0160 TO-252 SMK 0160 YWW |
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