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UC3836DW 데이터시트(PDF) 4 Page - Texas Instruments |
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UC3836DW 데이터시트(HTML) 4 Page - Texas Instruments |
4 / 10 page UC1835 UC1836 UC2835 UC2836 UC3835 UC3836 EQUATIONS: R1 = 0.100 V/IOUT (MAX) R2 = (VOUT - 2.5V/1mA) R3 = ((VIN - VBE - VSAT)*BETA(min))/IOUT (max) UC3835/36 TYPICAL APPLICATIONS Low Current Application using the UC3836 internal drive transistor Typical Output Current vs VIN and VOUT of the UC3836 internal drive transistor for PDISS = 0.5W (approx.) High Current Application using drive transistor Q2 to increase Q1 base drive and reduce UC3836 power dissipation Parallel Pass Transistors can be added for high current or high power dissipation applications UNITRODE INTEGRATED CIRCUITS 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. (603) 424-2410 • FAX 603-424-3460 APPLICATION AND OPERATION INFORMATION (cont.) UC1835/6 Foldback Current Limiting 4 |
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