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IRF6811STR1PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF6811STR1PBF
상세설명  RoHS Compliant and Halogen Free
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6811STR1PBF 데이터시트(HTML) 1 Page - International Rectifier

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1
01/28/11
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.28mH, RG = 50Ω, IAS = 15A.
Notes:
IRF6811SPbF
IRF6811STRPbF
DirectFET®
plus Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application

l Compatible with existing Surface Mount Techniques

l 100% Rg tested
l Footprint compatible to DirectFET
ISOMETRIC
SQ
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 15A
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.2nC
1.4nC
23nC
11nC
1.6V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
15
74
150
±16
25
19
32
15
V
A
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
ID = 19A
TJ = 25°C
TJ = 125°C
PD-97634
D
G
D
S


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