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IRF6691PBF 데이터시트(PDF) 1 Page - International Rectifier |
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1 / 10 page www.irf.com 1 05/18/06 DirectFET Power MOSFET Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro- cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Typical values (unless otherwise specified) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage DirectFET ISOMETRIC PD - 97204 l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques IRF6691PbF IRF6691TRPbF Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.72mH, RG = 25Ω, IAS = 26A. Notes: 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 7 8 9 10 ID = 32A TJ = 25°C TJ = 125°C 0 10 2030 405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 16V VDS= 10V ID= 17A SQ SX ST MQ MX MT VDSS VGS RDS(on) RDS(on) 20V max ±12V max 1.2m Ω@ 10V 1.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 47nC 15nC 4.4nC 26nC 30nC 2.0V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 230 26 180 j Max. 32 26 260 ±12 20 MT PROVISIONAL |
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