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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7748L1PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7748L1PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2012 International Rectifier February 18, 2013 IRF7748L1TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 2mA RDS(on) Static Drain-to-Source On-Resistance ––– 1.7 2.2 m VGS = 10V, ID = 89A VGS(th) Gate Threshold Voltage 2.0 2.9 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =60 V, VGS = 0V ––– ––– 250 VDS =60V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 176 ––– ––– S VDS = 10V, ID =89A Qg Total Gate Charge ––– 146 220 Qgs1 Pre– Vth Gate-to-Source Charge ––– 31 ––– VDS = 30V Qgs2 Post– Vth Gate-to-Source Charge ––– 12 ––– nC VGS = 10V Qgd Gate-to-Drain Charge ––– 40 ––– ID = 89A Qgodr Gate Charge Overdrive ––– 63 ––– See Fig.9 Qsw Switch Charge (Qgs2 + Qgd) ––– 52 ––– Qoss Output Charge ––– 82 ––– nC VDS = 16V,VGS = 0V RG Gate Resistance ––– 1.3 ––– td(on) Turn-On Delay Time ––– 19 ––– ns VDD = 30V, VGS = 10V tr Rise Time ––– 104 ––– ID = 89A td(off) Turn-Off Delay Time ––– 54 ––– RG= 1.8 tf Fall Time ––– 77 ––– Ciss Input Capacitance ––– 8075 ––– pF VGS = 0V Coss Output Capacitance ––– 1150 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 540 ––– ƒ = 1.0MHz Coss Output Capacitance ––– 5390 ––– VGS=0V, VDS = 1.0V,ƒ =1.0MHz Coss Output Capacitance ––– 850 ––– VGS=0V, VDS = 48V,ƒ =1.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 85 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 592 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 89A,VGS = 0V trr Reverse Recovery Time ––– 58 ––– ns TJ = 25°C ,IF = 89A,VDD = 30V Qrr Reverse Recovery Charge ––– 113 ––– nC di/dt = 100A/µs VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ––– -9.9 ––– mV/°C Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2% |
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