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IRF7665S2TR1PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7665S2TR1PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 07/02/09 IRF7665S2TRPbF IRF7665S2TR1PbF Notes through are on page 2 Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) DIGITALAUDIOMOSFET Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im- proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8Ω with no heatsink • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide · Lead-Free (Qualified up to 260°C Reflow) · Industrial Qualified DirectFET ISOMETRIC PD - 96239 SB SC M2 M4 L4 L6 L8 SB VDS 100 V RDS(on) typ. @ VGS = 10V 51 m : Qg typ. 8.3 nC RG(int) typ. 3.5 Key Parameters Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Power Dissipation j PD @TA = 25°C Power Dissipation j Linear Derating Factor jà W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 63 RθJA Junction-to-Ambient h 12.5 ––– RθJA Junction-to-Ambient i 20 ––– RθJ-Can Junction-to-Can jk ––– 5.0 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– °C/W V A W °C -55 to + 175 0.2 15 2.4 30 Max. 10.2 4.1 58 100 ± 20 14.4 |
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