전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

IRF7737L2PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF7737L2PBF
상세설명  Advanced Process Technology
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7737L2PBF 데이터시트(HTML) 1 Page - International Rectifier

  IRF7737L2PBF Datasheet HTML 1Page - International Rectifier IRF7737L2PBF Datasheet HTML 2Page - International Rectifier IRF7737L2PBF Datasheet HTML 3Page - International Rectifier IRF7737L2PBF Datasheet HTML 4Page - International Rectifier IRF7737L2PBF Datasheet HTML 5Page - International Rectifier IRF7737L2PBF Datasheet HTML 6Page - International Rectifier IRF7737L2PBF Datasheet HTML 7Page - International Rectifier IRF7737L2PBF Datasheet HTML 8Page - International Rectifier IRF7737L2PBF Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
www.irf.com
1
IRF7737L2TRPbF
IRF7737L2TR1PbF
HEXFET® is a registered trademark of International Rectifier.
10/27/11
Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer.
This HEXFET
® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
applications.
Applicable DirectFET® Outline and Substrate Outline

DirectFET® ISOMETRIC
L6
SB
SC
M2
M4
L4
L6
L8
V(BR)DSS
40V
RDS(on) typ.
1.5m
Ω
max.
1.9m
Ω
ID (Silicon Limited)
156A
Qg
89nC
Advanced Process Technology
Optimized for Industrial Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
g
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ãg
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
45
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
RθJCan
Junction-to-Can
fl
–––
1.8
RθJ-PCB
Junction-to-PCB Mounted
–––
0.5
Linear Derating Factor
f
W/°C
V
A
mJ
°C/W
W
°C
± 20
315
0.56
31
83
3.3
270
-55 to + 175
Max.
156
110
624
386
104
See Fig.18a, 18b, 16, 17
40
DirectFET® Power MOSFET
‚
D
D
G
S
SS
SS
S
PD - 96414


유사한 부품 번호 - IRF7737L2PBF

제조업체부품명데이터시트상세설명
logo
International Rectifier
IRF7737L2TR1PBF IRF-IRF7737L2TR1PBF Datasheet
629Kb / 10P
   DirectFETPower MOSFET
IRF7737L2TRPBF IRF-IRF7737L2TRPBF Datasheet
629Kb / 10P
   DirectFETPower MOSFET
More results

유사한 설명 - IRF7737L2PBF

제조업체부품명데이터시트상세설명
logo
International Rectifier
IRF3205STRR IRF-IRF3205STRR Datasheet
618Kb / 11P
   Advanced Process Technology
IRF3205ZSTRLPBF IRF-IRF3205ZSTRLPBF Datasheet
385Kb / 12P
   Advanced Process Technology
IRL2203NSTRLPBF IRF-IRL2203NSTRLPBF Datasheet
295Kb / 10P
   Advanced Process Technology
logo
Kersemi Electronic Co.,...
IRF640NS KERSEMI-IRF640NS Datasheet
1Mb / 11P
   Advanced Process Technology
IRFR48Z KERSEMI-IRFR48Z_15 Datasheet
1Mb / 12P
   Advanced Process Technology
IRLR2905Z KERSEMI-IRLR2905Z Datasheet
1Mb / 11P
   Advanced Process Technology
IRFZ24N KERSEMI-IRFZ24N Datasheet
741Kb / 8P
   Advanced Process Technology
IRFZ44N KERSEMI-IRFZ44N Datasheet
700Kb / 8P
   Advanced Process Technology
logo
International Rectifier
IRF1104SPBF IRF-IRF1104SPBF_15 Datasheet
272Kb / 11P
   Advanced Process Technology
IRF1405SPBF IRF-IRF1405SPBF_15 Datasheet
313Kb / 11P
   Advanced Process Technology
IRF2204PBF IRF-IRF2204PBF_15 Datasheet
263Kb / 9P
   Advanced Process Technology
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com