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IRF7737L2PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7737L2PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 IRF7737L2TRPbF IRF7737L2TR1PbF HEXFET® is a registered trademark of International Rectifier. 10/27/11 Description The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications. Applicable DirectFET® Outline and Substrate Outline DirectFET® ISOMETRIC L6 SB SC M2 M4 L4 L6 L8 V(BR)DSS 40V RDS(on) typ. 1.5m Ω max. 1.9m Ω ID (Silicon Limited) 156A Qg 89nC • Advanced Process Technology • Optimized for Industrial Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current g PD @TC = 25°C Power Dissipation f PD @TA = 25°C Power Dissipation e EAS Single Pulse Avalanche Energy (Thermally Limited) h EAS (tested) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current Ãg A EAR Repetitive Avalanche Energy g mJ TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 45 RθJA Junction-to-Ambient j 12.5 ––– RθJA Junction-to-Ambient k 20 ––– RθJCan Junction-to-Can fl ––– 1.8 RθJ-PCB Junction-to-PCB Mounted ––– 0.5 Linear Derating Factor f W/°C V A mJ °C/W W °C ± 20 315 0.56 31 83 3.3 270 -55 to + 175 Max. 156 110 624 386 104 See Fig.18a, 18b, 16, 17 40 DirectFET® Power MOSFET D D G S SS SS S PD - 96414 |
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