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IRFP3006PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP3006PBF
상세설명  High Efficiency Synchronous Rectification in SMPS
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFP3006PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP3006PbF
2
www.irf.com
© 2013 International Rectifier
September 06, 2013
Static @ TJ = 25°C (unless otherwise specified)
 
   
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.07
––– V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.1
2.5
m
 VGS = 10V, ID = 170A 
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA VDS = 60V, VGS = 0V
–––
–––
250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Internal Gate Resistance
–––
2.0
–––

Dynamic @ TJ = 25°C (unless otherwise specified)
 
   
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
gfs
Forward Transconductance
280
–––
–––
S
VDS = 25V, ID = 170A
Qg
Total Gate Charge
–––
200
300
nC
ID = 170A
Qgs
Gate-to-Source Charge
–––
37
–––
VDS =30V
Qgd
Gate-to-Drain ("Miller") Charge
–––
60
–––
VGS = 10V 
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
140
–––
ID = 170A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
16
–––
ns
VDD = 39V
tr
Rise Time
–––
182
–––
ID = 170A
td(off)
Turn-Off Delay Time
–––
118
–––
RG = 2.7
tf
Fall Time
–––
189
–––
VGS = 10V 
Ciss
Input Capacitance
––– 8970 –––
pF
VGS = 0V
Coss
Output Capacitance
––– 1020 –––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
534
–––
ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance
(Energy Related)
––– 1480 –––
VGS = 0V, VDS = 0V to 48V 
See Fig. 11
Coss eff. (TR) Effective Output Capacitance
(Time Related)
––– 1920 –––
VGS = 0V, VDS = 0V to 48V 
Diode Characteristics
 
   
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
257
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
1028
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 170A, VGS = 0V 
trr
Reverse Recovery Time
–––
44
–––
ns TJ = 25°C
–––
48
–––
TJ = 125°C
Qrr
Reverse Recovery Charge
–––
63
–––
nC TJ = 25°C
–––
77
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.4
–––
A
TJ = 25°C
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. Junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50, IAS = 170A,VGS =10V. Part not Recommended for use above
this value.
ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
* All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet.
D
S
G
VR = 51V,
IF = 170A
di/dt = 100A/µs 


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