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STGW20V60DF 데이터시트(PDF) 3 Page - List of Unclassifed Manufacturers

부품명 STGW20V60DF
상세설명  600 V, 20 A very high speed trench gate field-stop IGBT
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제조업체  ETC2 [List of Unclassifed Manufacturers]
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STGW20V60DF 데이터시트(HTML) 3 Page - List of Unclassifed Manufacturers

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DocID024360 Rev 3
3/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
I
C
Continuous collector current at T
C
= 25 °C
40
A
I
C
Continuous collector current at T
C
= 100 °C
20
A
I
CP
(1)
1.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current
80
A
V
GE
Gate-emitter voltage
±20
V
I
F
Continuous forward current at T
C
= 25 °C
40
A
I
F
Continuous forward current at T
C
= 100 °C
20
A
I
FP(1)
Pulsed forward current
80
A
P
TOT
Total dissipation at T
C
= 25 °C
167
W
T
STG
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case IGBT
0.9
°C/W
R
thJC
Thermal resistance junction-case diode
2.08
°C/W
R
thJA
Thermal resistance junction-ambient
50
°C/W


유사한 부품 번호 - STGW20V60DF

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
STGW20V60DF STMICROELECTRONICS-STGW20V60DF Datasheet
2Mb / 23P
   Low thermal resistance
June 2013 Rev 3
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유사한 설명 - STGW20V60DF

제조업체부품명데이터시트상세설명
logo
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