2N2222A datasheet(3/6 Pages) MICROSEMI | TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

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2N2222A 데이터시트(PDF) 3 Page - Microsemi Corporation

부품명	2N2222A

부품 상세설명	TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0060 Rev. 2 (100247)

Page 3 of 6

PACKAGE DIMENSIONS

NOTES:

Dimensions

1. Dimensions are in inches.

Symbol

Inches

Millimeters

Note

2. Millimeters are given for general information only.

Min

Max

Min

Max

3. Beyond r (radius) maximum, TL shall be held for a minimum length

.178

.195

4.52

4.95

of .011 inch (0.28 mm).

.170

.210

4.32

5.33

4. Dimension TL measured from maximum HD.

.209

.230

5.31

5.84

5. Body contour optional within zone defined by HD, CD, and Q.

.100 TP

2.54 TP

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)

.016

.021

0.41

0.53

7,8

below seating plane shall be within .007 inch (0.18 mm) radius of

.500

.750

12.70

19.05

7,8,13

true position (TP) at maximum material condition (MMC) relative to

.016

.019

0.41

0.48

7,8

tab at MMC.

.050

1.27

7,8

7. Dimension LU applies between L1 and L2. Dimension LD applies

.250

6.35

7,8

between L2 and LL minimum. Diameter is uncontrolled in L1 and

.100

2.54

beyond LL minimum.

.030

0.76

8. All three leads.

.028

.048

0.71

1.22

3,4

9. The collector shall be internally connected to the case.

.036

.046

0.91

1.17

10. Dimension r (radius) applies to both inside corners of tab.

.010

0.25

11. In accordance with ASME Y14.5M, diameters are equivalent to

φx

° TP

symbology.

1, 2, 9, 11, 12, 13

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.

and 1.75 inches (44.45 mm) max.

FIGURE 1. Physical dimensions (similar to TO-18).

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