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2N2222A 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 2N2222A
상세설명  TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2222A 데이터시트(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0060 Rev. 2 (100247)
Page 2 of 6
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
30
50
IC = 1.0mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
35
75
150
325
IC = 10mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
IC = 150mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
120
300
IC = 500mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
hFE
20
30
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
VCE(sat)
0.3
1.0
Vdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
VBE(sat)
0.6
1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
hfe
30
50
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
|hfe|
2.5
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
8.0
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
25
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
See figure 8 of MIL-PRF-19500/255
ton
35
ηs
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
toff
300
ηs
(2) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%.


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