2N2222A datasheet(2/6 Pages) MICROSEMI | TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

부품명	2N2222A

부품 상세설명	TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

Download	6 Pages

Scroll/Zoom	100%

제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

Logo

2 / 6 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0060 Rev. 2 (100247)

Page 2 of 6

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

IC = 0.1mAdc, VCE = 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

30

50

IC = 1.0mAdc, VCE = 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

35

75

150

325

IC = 10mAdc, VCE = 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

IC = 150mAdc, VCE = 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

120

300

IC = 500mAdc, VCE = 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

hFE

20

30

Collector-Emitter Saturation Voltage

IC = 150mAdc, IB = 15mAdc

IC = 500mAdc, IB = 50mAdc

VCE(sat)

0.3

1.0

Vdc

Base-Emitter Voltage

IC = 150mAdc, IB = 15mAdc

IC = 500mAdc, IB = 50mAdc

VBE(sat)

0.6

1.2

2.0

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

hfe

30

50

Magnitude of Small–Signal Short-Circuit

Forward Current Transfer Ratio

IC = 20mAdc, VCE = 20Vdc, f = 100MHz

|hfe|

2.5

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

8.0

pF

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

25

pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

See figure 8 of MIL-PRF-19500/255

ton

35

ηs

Turn-Off Time

See Figure 9 of MIL-PRF-19500/255

toff

300

ηs

(2) Pulse Test: Pulse Width = 300

μs, Duty Cycle ≤ 2.0%.

유사한 부품 번호 - 2N2222A

제조업체	부품명	데이터시트	부품 상세설명
NXP Semiconductors	2N2222A	53Kb / 8P	NPN switching transistors 1997 May 29
Foshan Blue Rocket Elec...	2N2222A	1Mb / 6P	Silicon NPN transistor in a TO-92 Plastic Package
List of Unclassifed Man...	2N2222A	278Kb / 5P	High Speed Switching Transistor
Comset Semiconductor	2N2222A	84Kb / 4P	SWITCHING SILICON TRANSISTORS
STMicroelectronics	2N2222A	73Kb / 8P	HIGH SPEED SWITCHES June 1999

More results

유사한 설명 - 2N2222A

제조업체	부품명	데이터시트	부품 상세설명
Everlight Electronics C...	EAHP5630RA0	339Kb / 11P	Technical Data Sheet
Everlight Electronics C...	EAHP5630GA0	352Kb / 11P	Technical Data Sheet
Pasternack Enterprises,...	PE83IR1002	391Kb / 5P	TECHNICAL DATA SHEET
	PE83IR1017	393Kb / 5P	TECHNICAL DATA SHEET
	PE87FL1018	521Kb / 4P	TECHNICAL DATA SHEET
	PE87FL1019	522Kb / 4P	TECHNICAL DATA SHEET
	PE15A3036	871Kb / 8P	TECHNICAL DATA SHEET
	PE15A3038	547Kb / 8P	TECHNICAL DATA SHEET
	PE15A1033	598Kb / 7P	TECHNICAL DATA SHEET
	PE15A1039	467Kb / 6P	TECHNICAL DATA SHEET

More results

2N2222A 데이터시트(PDF) 2 Page - Microsemi Corporation

2N2222A 데이터시트(HTML) 2 Page - Microsemi Corporation

유사한 부품 번호 - 2N2222A

유사한 설명 - 2N2222A

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL