STF11NM50N datasheet(3/16 Pages) STMICROELECTRONICS

부품명	STF11NM50N

상세설명	N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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STD11NM50N, STF11NM50N, STP11NM50N

Electrical ratings

Doc ID 17156 Rev 3

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

8.5

8.5 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

6

6 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

34

34(1)

A

PTOT

Total dissipation at TC = 25 °C

70

25

W

dv/dt (3)

3.

ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

DPAK

TO-220FP

Rthj-case Thermal resistance junction-case max

1.79

5

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu

50

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Thermal data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive(1)

1.

Pulse width limited by TJMAX.

3A

EAS

Single pulse avalanche energy (2)

2.

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

150

mJ

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