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CXT3019 데이터시트(PDF) 1 Page - Central Semiconductor Corp |
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CXT3019 데이터시트(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Collector Current (Peak) ICM 1.5 A Power Dissipation PD 1.2 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=90V 10 nA IEBO VEB=5.0V 10 nA BVCBO IC=100µA 140 V BVCEO IC=30mA 80 V BVEBO IE=100µA 7.0 V VCE(SAT) IC=150mA, IB=15mA 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.5 V VBE(SAT) IC=150mA, IB=15mA 1.1 V hFE VCE=10V, IC=0.1mA 50 hFE VCE=10V, IC=10mA 90 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 hFE VCE=10V, IC=1.0A 15 CXT3019 SURFACE MOUNT NPN SILICON TRANSISTORS SOT-89 CASE Central Semiconductor Corp. TM R3 ( 20-December 2001) DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. |
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