SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

IRF250 Series

N-Channel Power MOSFET

30A, 200Volts

DESCRIPTION

Low reverse transfer capacitance

(C

= 250pF typical)

RSS

R

= 0.085Ω @ V

= 10V

DS(ON)

GS

Ultra low gate charge(140nC Max.)

Fast switching capability

100% avalanche energy specified

Improved dv/dt capability

150°C operation temperature

FEATURES

PRODUCT SUMMARY

I (A)

D

30

V

(V)

DSS

200

0.085 @ V

= 10V

GS

140

R

(Ω)

DS(ON)

Q (nC) max.

G

UNIT

V /ns

V

A

mJ

ºC

-55 to 150

VALUE

30

21

200

±20

120

200

190

5.0

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

T =25°C to 150°C

J

TEST CONDITIONS

R

=20KΩ

GS

T =25°C

C

T =100°C

C

Operation junction temperature

Storage temperature

Peak diode recovery dv/dt(Note 3)

PARAMETER

Pulsed Drain current(Note 1)

Continuous Drain Current (V

=10V)

GS

Total power dissipation

Gate to Source voltage

Drain to Gate voltage

Drain to Source voltage

SYMBOL

dv/dt

.

.

lbf in (N m)

300

Maximum soldering temperature, for 10 seconds

Mounting torque, #6-32 or M3 screw

-55 to 150

Note:

10 (1.1)

1.6mm from case

Avalanche current(Note 1)

30

T =25°C

C

2

AS

DD

G

J

410

Single pulse avalanche energy(Note 2)

3

,

T

<

°C.

SD

DD

(BR)DSS

J

starting

150

1.5

Derate above 25

19

Repetitive avalanche energy(Note 1)

l

=30A, R

=10V

AR

GS

=50Ω, V

GS

l

=30A, =0.7mH

AS

L

D (Drain)

G

(Gate)

S (Source)

W

www.nellsemi.com

Page 1 of 7

TO-3PB

G

D

S

D

They are designed for use in applications such as

switched mode power supplies, DC to DC converters,

motor control circuits, UPS and general purpose

switching applications.

The Nell IRF250 is a three-terminal silicon device

with current conduction capability of 30A, fast switching

speed, low on-state resistance, breakdown voltage

rating of 200V, and max. threshold voltage of 4 volts.

(IRF250B)

TO-247AB

(

)

IRF250C

G

D

S