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2SC3988 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Savantic, Inc.

๋ถ€ํ’ˆ๋ช… 2SC3988
์ƒ์„ธ๋‚ด์šฉ  Silicon NPN Power Transistors
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์ œ์กฐ์‚ฌ  SAVANTIC [Savantic, Inc.]
ํ™ˆํŽ˜์ด์ง€  http://www.svntc.com
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2SC3988 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Savantic, Inc.

   
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SavantIC Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC3988
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
800
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=;
500
V
V(BR)EBO
Emitter-base breakdown voltage
IC=1mA ;IC=0
7
V
VCEX(SUS)
Collector-emitter sustaining voltage
IC=10A;IB1=-IB2=2A;
L=200ยตH
500
V
VCEsat
Collector-emitter saturation voltage
IC=12A; IB=2.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=12A; IB=2.4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
ยตA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
ยตA
hFE-1
DC current gain
IC=2.4A ; VCE=5V
15
50
hFE-2
DC current gain
IC=12A ; VCE=5V
8
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
260
pF
fT
Transition frequency
IC=2.4A ; VCE=10V
18
MHz
Switching times
ton
Turn-on time
0.5
ยตs
tstg
Storage time
3.0
ยตs
tf
Fall time
5IB1=-2.5IB2= IC=14A
VCCE200V;RL=14.3F
0.3
ยตs
hFE-1 Classifications
L
M
N
15-30
20-40
30-50


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