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IRF1010 데이터시트(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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IRF1010 데이터시트(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 7 page SEMICONDUCTOR RoHS RoHS N-Channel Power MOSFET Nell High Power Products IRF1010 Series (84A, 60Volts) They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. DESCRIPTION Low reverse transfer capacitance (C = 200pF typical) RSS R = 8.5mΩ @ V = 10V DS(ON) GS Ultra low gate charge(86nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 84 V (V) DSS 75 8.5 @ V = 10V GS 86 R (mΩ) DS(ON) Q (nC) max. G D (Drain) G (Gate) S (Source) TO-220AB (IRF1010A) D G D S 2 TO-263(D PAK) (IRF1010H) UNIT V /ns V W /°C A ºC -55 to 175 VALUE 84 60 60 ±20 340 60 140 5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS V =10V, GS T =25°C C V =10V, GS T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 4) PARAMETER Pulsed Drain current(Note 2) Continuous Drain Current (Note 1) Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 175 Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 2) 51 T =25°C C 2 .Repetitive rating: pulse width limited by junction temperature. Repetitive avalanche energy(Note 2) EAR 3 .L=0.077mH, I ≤51A, R =25Ω, starting T =25˚C AS G J 0.90 Derating factor above 25 °C G D S D www.nellsemi.com Page 1 of 7 W I (A), Package Limited D 60 EAS Single pulse avalanche energy(Note 3) mJ 99 See fig.12,16,17 L=0.077mH, I =51A AS 4 .I ≤ 51A, di/dt ≤ 260A/µs, V ≤ V , T 175°C. SD DD (BR)DSS J ≤ |
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