FQD1N80 datasheet(2/9 Pages) FAIRCHILD

부품명	FQD1N80

상세설명	N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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Package Marking and Ordering Information

FQD1N80 / FQU1N80 Rev. C2

www.fairchildsemi.com

2

Part Number

Top Mark

Package

Reel Size

Tape Width

Quantity

FQD1N80

FQD1N80TM

D-PAK

330 mm

16 mm

2500 units

Packing Method

Tape and Reel

Electrical Characteristics T

C = 25°C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

800

--

V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

1.0

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 800 V, VGS = 0 V

--

10

µA

VDS = 640 V, TC = 125°C

--

100

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

3.0

--

5.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS= 10V,ID=0.5 A

--

15.5

20

Ω

gFS

Forward Transconductance

VDS = 50 V, ID = 0.5 A

--

0.75

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

150

195

pF

Coss

Output Capacitance

--

20

26

pF

Crss

Reverse Transfer Capacitance

--

2.7

3.5

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 400 V, ID = 1.0 A,

RG = 25 Ω

--

10

30

ns

tr

Turn-On Rise Time

--

25

60

ns

td(off)

Turn-Off Delay Time

--

15

40

ns

tf

Turn-Off Fall Time

--

25

60

ns

Qg

Total Gate Charge

VDS = 640 V, ID = 1.0 A,

VGS = 10 V

--

5.5

7.2

nC

Qgs

Gate-Source Charge

--

1.1

--

nC

Qgd

Gate-Drain Charge

--

3.3

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

1.0

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

4.0

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 1.0 A

--

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 1.0 A,

dIF / dt = 100 A/µs

--

300

--

ns

Qrr

Reverse Recovery Charge

--

0.6

--

µC

Notes:

1. Repetitive rating : pulse-width limited by maximum junction temperature.

2. L = 170 mH, IAS = 1.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 1.0 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature.

FQU1N80

FQU1N80TU

I-PAK

N/A

70 units

Tube

(Note 4)

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