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FQD1N80 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQD1N80 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Package Marking and Ordering Information ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C2 www.fairchildsemi.com 2 Part Number Top Mark Package Reel Size Tape Width Quantity FQD1N80 FQD1N80TM D-PAK 330 mm 16 mm 2500 units Packing Method Tape and Reel Electrical Characteristics T C = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS= 10V,ID=0.5 A -- 15.5 20 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.5 A -- 0.75 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 150 195 pF Coss Output Capacitance -- 20 26 pF Crss Reverse Transfer Capacitance -- 2.7 3.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 1.0 A, RG = 25 Ω -- 10 30 ns tr Turn-On Rise Time -- 25 60 ns td(off) Turn-Off Delay Time -- 15 40 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = 640 V, ID = 1.0 A, VGS = 10 V -- 5.5 7.2 nC Qgs Gate-Source Charge -- 1.1 -- nC Qgd Gate-Drain Charge -- 3.3 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.0 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 1.0 A, dIF / dt = 100 A/µs -- 300 -- ns Qrr Reverse Recovery Charge -- 0.6 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 170 mH, IAS = 1.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 1.0 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. FQU1N80 FQU1N80TU I-PAK N/A N/A 70 units Tube (Note 4) (Note 4) |
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