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2SD1880 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD1880 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1880 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 µA IEBO Emitter cut-off current VEB=4V ;IC=0 40 130 mA ICES Collector cut-off current VCE=1500V 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=6A ; VCE=5V 5 10 VF Diode forward voltage IEC=8A 2 V tf Fall time IC=6A;RL=33.3@ IB1=1.2A IB2=-2.4A;VCC=200V 0.1 0.3 µs |
유사한 부품 번호 - 2SD1880 |
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유사한 설명 - 2SD1880 |
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