D

S12019 Rev. B-2

1 of 2

1N4148 / 1N4448

Features

1N4148 / 1N4448

FAST SWITCHING DIODE

·

Fast Switching Speed

·

General Purpose Rectification

·

Silicon Epitaxial Planar Construction

Characteristic

Symbol

1N4148

1N4448

Unit

Non-Repetitive Peak Reverse Voltage

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

75

V

RMS Reverse Voltage

53

V

Forward Continuous Current (Note 1)

300

500

mA

Average Rectified Output Current (Note 1)

150

mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0s

@ t = 1.0

ms

1.0

2.0

A

Power Dissipation (Note 1)

Derate Above 25

°C

500

1.68

mW

mW/

°C

Thermal Resistance, Junction to Ambient Air (Note 1)

300

K/W

Operating and Storage Temperature Range

-65 to +175

°C

Notes: 1. Valid provided that device terminals are kept at ambient temperature.

Characteristic

Symbol

Min

Max

Unit

Test Condition

Maximum Forward Voltage

1N4148

1N4448

1N4448

¾

0.62

¾

1.0

0.72

1.0

V

Maximum Peak Reverse Current

¾

5.0

50

30

25

mA

mA

mA

nA

°C

°C

Capacitance

¾

4.0

pF

Reverse Recovery Time

¾

4.0

ns

W

Features

·

Case: DO-35

·

Leads: Solderable per MIL-STD-202,

Method 208

·

Polarity: Cathode Band

·

Marking: Type Number

·

Weight: 0.13 grams (approx.)

Mechanical Data

A

A

B

C

D

DO-35

Dim

Min

Max

A

25.40

¾

B

¾

4.00

C

¾

0.60

D

¾

2.00

All Dimensions in mm