BC807-40 datasheet(1/3 Pages) DIODES

부품명	BC807-40

상세설명	PNP SURFACE MOUNT TRANSISTOR

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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DS11208 Rev. 9 - 2

1 of 3

BC807-16/-25/-40

BC807-16/ -25/ -40

PNP SURFACE MOUNT TRANSISTOR

Maximum Ratings @ T

A = 25°C unless otherwise specified

Notes:

1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.

2. Short duration pulse test used to minimize self-heating effect.

Characteristic

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-500

mA

Peak Collector Current

ICM

-1000

mA

Peak Emitter Current

IEM

-1000

mA

Power Dissipation at TSB = 50°C (Note 1)

Pd

310

mW

Thermal Resistance, Junction to Substrate Backside (Note 1)

RqJSB

320

°C/W

Thermal Resistance, Junction to Ambient Air (Note 1)

RqJA

403

°C/W

Operating and Storage Temperature Range

Tj,TSTG

-65 to +150

°C

Features

·

Ideally Suited for Automatic Insertion

·

Epitaxial Planar Die Construction

·

For Switching, AF Driver and Amplifier

Applications

·

Complementary NPN Types Available (BC817)

·

Case: SOT-23, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Pin Connections: See Diagram

·

Marking (See Page 3): BC807-16 5A, K5A

BC807-25 5B, K5B

BC807-40 5C,K5C

·

Ordering & Date Code Information: See Page 3

·

Approx. Weight: 0.008 grams

Mechanical Data

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic (Note 2)

Symbol

Min

Typ

Max

Unit

Test Condition

DC Current Gain

Current Gain Group -16

-25

-40

Current Gain Group -16

-25

-40

hFE

100

160

250

60

100

170

—

250

400

600

—

VCE = 1.0V, IC = 100mA

VCE = 1.0V, IC = 300mA

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-0.7

V

IC = 500mA, IB = 50mA

Base-Emitter Voltage

VBE

—

-1.2

V

VCE = 1.0V, IC = 300mA

Collector-Emitter Cutoff Current

ICES

——

-100

-5.0

nA

µA

VCE = 45V

VCE = 25V, Tj = 150°C

Emitter-Base Cutoff Current

IEBO

—

-100

nA

VEB = 4.0V

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 50MHz

Collector-Base Capacitance

CCBO

—

12

pF

VCB = 10V, f = 1.0MHz

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

C

B

E

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.85

0.80

a

0

°

8

°

All Dimensions in mm

유사한 부품 번호 - BC807-40

제조업체	부품명	데이터시트	상세설명
General Semiconductor	BC807-40	228Kb / 5P	Small Signal Transistors (PNP)
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