CYStech Electronics Corp.

Spec. No. : C744Q8

Issued Date : 2009.10.16

Revised Date : 2011.10.03

Page No. : 4/10

MTBA5C10Q8

CYStek Product Specification

N-channel Characteristic Curves

V - Drain-Source Voltage( V )

0

0

3

DS

1

2

8.0V

V = 10V

6

9

7.0V

GS

5.0V

3

45

On-Region Characteristics

15

12

6.0V

On-Resistance Variation with Drain Current and Gate Voltage

6.0 V

1.6

0.8

0

1.2

1.0

1.4

36

2.2

1.8

2.0

2.4

912

7.0 V

8.0 V

10 V

15

I - Drain Current( A )

D

GS

V = 5.0 V

On-Resistance Variation with Temperature

T - Junction Temperature (°C)

0.4

-50

0.7

1.0

0

J

-25

25

D

I = 2.5A

V

= 10V

1.3

1.6

1.9

GS

125

50

75

100

150

On-Resistance Variation with Gate-Source Voltage

T = 125°C

V - Gate-Source Voltage( V )

0.05

2

0.10

0.20

0.15

GS

4

6

T = 25°C

A

A

0.40

0.30

0.25

0.35

0.45

810

I = 1.5 A

D

Body Diode Forward Voltage Variation with

Source Current and Temperature

25°C

T = 125°C

V - Body Diode Forward Voltage( V )

0.001

0

0.01

0.1

0.4

SD

0.2

0.6

V = 0V

1

10

100

A

GS

1.0

0.8

1.2

-55°C

1.4

T = -55°C

V - Gate-Source Voltage( V )

2

2

0

4

3

GS

V = 10V

8

6

10

12

DS

A

5

4

6

25°C

125°C

Transfer Characteristics