전자부품 데이터시트 검색엔진 |
|
MMBTH10-7 데이터시트(PDF) 1 Page - Diodes Incorporated |
|
MMBTH10-7 데이터시트(HTML) 1 Page - Diodes Incorporated |
1 / 2 page DS31031 Rev. 4 - 2 1 of 2 MMBTH10 www.diodes.com MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators · High Current Gain Bandwidth Product · Ideal for Mixer and RF Amplifier Applications with collector currents in the 100 mA - 30 mA Range Characteristic Symbol MMBTH10 Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3.0 V Collector Current - Continuous (Note 1) IC 50 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W Operating and Storage and Temperature Range Tj,TSTG -55 to +150 °C Features Maximum Ratings @ TA = 25 °C unless otherwise specified A E J L TOP VIEW M B C H G D K C B E Mechanical Data · Case: SOT-23, Molded Plastic · Case material - UL Flammability Rating 94V-0 · Moisture sensitivity: Level 1 per J-STD-020A · Terminals: Solderable per MIL-STD-202, Method 208 · Terminal Connections: See Diagram · Marking (See Page 2): K3H, K3Y · Ordering & Date Code Information: See Page 2 · Weight: 0.008 grams (approx.) Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V(BR)CEO 25 ¾ V IC = 1mA IB = 0 Collector-Base Breakdown Voltage V(BR)CBO 30 ¾ V IC = 100 mA, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO 3.0 ¾ V IE = 10 mA, IC = 0 Collector Cutoff Current ICBO ¾ 100 nA VCB = 25V, IE = 0 Emitter Cutoff Current IEBO ¾ 100 nA VEB = 2V, IC = 0 ON CHARACTERISTICS (Note 2) DC Current Gain hFE 60 ¾¾ IC = 4mA, VCE = 10.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.5 V IC = 4mA, IB = 400 mA Base- Emitter On Voltage VBE(SAT) ¾ 0.95 V IC = 4mA, VCE = 10.0V SMALL SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT 650 ¾ MHz VCE = 10V, f = 100MHz, IC = 4mA Collector-Base Capacitance CCB ¾ 0.7 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Feedback Capacitance CRB ¾ 0.65 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Time Constant Rb’Cc ¾ 9ps VCB = 10V, f = 31.8MHz, IC = 4mA A E J L TOP VIEW M B C H G D K C C B B E E SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 ° 8 ° All Dimensions in mm E B C |
유사한 부품 번호 - MMBTH10-7 |
|
유사한 설명 - MMBTH10-7 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |